GOFORD GT013N04D5C

GOFORD · FETs & Power MOSFETs · MPN GT013N04D5C

No reviews yet — be the first to review GOFORD GT013N04D5C.

Specifications

Gate Charge(Qg)88nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)270A
Output Capacitance(Coss)3.8nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation138W
RDS(on)0.73mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)80pF
Number1 N-channel
Input Capacitance(Ciss)6.1nF
Vgs±20V

Technical details

N-Channel 40V 270A 138W Surface Mount DFN5x6-8L

Related FETs & Power MOSFETs