GOFORD GT011N03TLE

GOFORD · FETs & Power MOSFETs · MPN GT011N03TLE

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Specifications

Gate Charge(Qg)98nC
Drain to Source Voltage30V
Output Capacitance(Coss)2.142nF
Current - Continuous Drain(Id)250A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)549pF
RDS(on)1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.278nF
Vgs±18V

Technical details

30V 250A 1.5V 300W 1mΩ@10V 1 N-channel N-Channel TOLL-8L Single FETs, MOSFETs RoHS

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