GOFORD · FETs & Power MOSFETs · MPN GT011N03ME
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| Gate Charge(Qg) | 84nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 2.1nF |
| Current - Continuous Drain(Id) | 209A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | 550pF |
| RDS(on) | 1.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.2nF |
| Vgs | ±20V |
N-Channel 30V 209A 89W Surface Mount TO-263