GOFORD GT011N03D5E

GOFORD · FETs & Power MOSFETs · MPN GT011N03D5E

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Specifications

Gate Charge(Qg)84nC
Drain to Source Voltage30V
Output Capacitance(Coss)2.1nF
Current - Continuous Drain(Id)209A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6nF
Vgs±18V

Technical details

N-Channel 30V 209A 89W Surface Mount DFN5x6-8L

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