GOFORD · FETs & Power MOSFETs · MPN GT010N10TT
No reviews yet — be the first to review GOFORD GT010N10TT.
| Output Capacitance(Coss) | 4.22nF |
|---|---|
| Pd - Power Dissipation | 412W |
| Gate Charge(Qg) | 220nC |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 380A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 1.07mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.2nF |
412W 100V 380A 3V 1.07mΩ@10V 1 N-channel N-Channel TOLT-16 Single FETs, MOSFETs RoHS