GOFORD GT010N10TL

GOFORD · FETs & Power MOSFETs · MPN GT010N10TL

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Specifications

Gate Charge(Qg)184nC
Drain to Source Voltage100V
Output Capacitance(Coss)4.221nF
Current - Continuous Drain(Id)370A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation400W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)1.15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13.166nF
Vgs±20V

Technical details

100V 370A 400W Surface Mount TOLL-8L

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