GOFORD GT009N04D5

GOFORD · FETs & Power MOSFETs · MPN GT009N04D5

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Specifications

Gate Charge(Qg)86nC
Drain to Source Voltage45V
Output Capacitance(Coss)1.322nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)1.115nF
RDS(on)1.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.864nF
Vgs±20V

Technical details

N-Channel 45V 100A 125W Surface Mount DFN5x6-8L

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