GOFORD GT007N04TLH

GOFORD · FETs & Power MOSFETs · MPN GT007N04TLH

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Specifications

Gate Charge(Qg)142nC
Drain to Source Voltage40V
Output Capacitance(Coss)2.8nF
Current - Continuous Drain(Id)345A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation159W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)0.91mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.5nF
Vgs±20V

Technical details

N-Channel 40V 345A 159W Surface Mount TOLL-8L

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