GOFORD GT007N04TL

GOFORD · FETs & Power MOSFETs · MPN GT007N04TL

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Specifications

Gate Charge(Qg)163nC
Drain to Source Voltage40V
Output Capacitance(Coss)1.842nF
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)1.511nF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.363nF
Vgs±20V

Technical details

N-Channel 40V 150A 156W Surface Mount TOLL-8L

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