GOFORD · FETs & Power MOSFETs · MPN GT007N04D5C
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| Output Capacitance(Coss) | 3.9nF |
|---|---|
| Pd - Power Dissipation | 170W |
| Gate Charge(Qg) | 125nC |
| Configuration | - |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 350A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| RDS(on) | 0.72mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.5nF |
170W 40V 350A 1.5V 0.72mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS