GOFORD GT007N04D5

GOFORD · FETs & Power MOSFETs · MPN GT007N04D5

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Specifications

Output Capacitance(Coss)3.9nF
Pd - Power Dissipation170W
Configuration-
Drain to Source Voltage40V
Gate Charge(Qg)125nC
Current - Continuous Drain(Id)350A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)165pF
RDS(on)0.72mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.5nF

Technical details

N-Channel 40V 350A 170W Surface Mount DFN5x6-8L

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