GOFORD GC300N65K

GOFORD · FETs & Power MOSFETs · MPN GC300N65K

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Specifications

Output Capacitance(Coss)20pF
Pd - Power Dissipation132W
Gate Charge(Qg)23nC
Configuration-
Drain to Source Voltage650V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
RDS(on)270mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.9pF
Number1 N-channel
Input Capacitance(Ciss)660pF

Technical details

132W 650V 13A 3.5V 270mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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