GOFORD · FETs & Power MOSFETs · MPN GC280N65F
No reviews yet — be the first to review GOFORD GC280N65F.
| Gate Charge(Qg) | 27nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 28pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| RDS(on) | 215mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.25nF |
| Vgs | ±30V |
N-Channel 650V 15A 96.1W Through Hole TO-220F