GOFORD · FETs & Power MOSFETs · MPN GC210N80FE
No reviews yet — be the first to review GOFORD GC210N80FE.
| Output Capacitance(Coss) | 48pF |
|---|---|
| Pd - Power Dissipation | 51W |
| Gate Charge(Qg) | 50nC |
| Drain to Source Voltage | 800V |
| Configuration | - |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 185mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.2nF |
51W 800V 17A 3.6V 185mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS