GOFORD · FETs & Power MOSFETs · MPN GC20N65T
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 39nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 61pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 151W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.724nF |
N-Channel 650V 20A 151W Through Hole TO-220