GOFORD · FETs & Power MOSFETs · MPN GC190N65QF
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| Output Capacitance(Coss) | 35pF |
|---|---|
| Pd - Power Dissipation | 148W |
| Configuration | - |
| Gate Charge(Qg) | 36nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
148W 650V 19A 4V 150mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS