GOFORD · FETs & Power MOSFETs · MPN GC180N65D8
No reviews yet — be the first to review GOFORD GC180N65D8.
| Gate Charge(Qg) | 42nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 46pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 151W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 156mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.7nF |
| Vgs | ±30V |
N-Channel 650V 20A 151W Surface Mount DFN8x8-4L