GOFORD · FETs & Power MOSFETs · MPN GC125N65TF
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| Output Capacitance(Coss) | 50pF |
|---|---|
| Pd - Power Dissipation | 200W |
| Gate Charge(Qg) | 52nC |
| Configuration | - |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 106mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
200W 650V 25A 4V 106mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS