GOFORD · FETs & Power MOSFETs · MPN GC125N65QF
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| Gate Charge(Qg) | 52nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 27A |
| Output Capacitance(Coss) | 88pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.6V |
| Pd - Power Dissipation | 205W |
| RDS(on) | 103mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.58nF |
| Vgs | ±30V |
N-Channel 650V 27A 205W Through Hole TO-247