GOFORD GC125N65FF

GOFORD · FETs & Power MOSFETs · MPN GC125N65FF

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Specifications

Gate Charge(Qg)52nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)25A
Output Capacitance(Coss)88pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation27W
RDS(on)103mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.2pF
Number1 N-channel
Input Capacitance(Ciss)1.58nF
Vgs±30V

Technical details

N-Channel 650V 25A 27W Through Hole TO-220F

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