GOFORD · FETs & Power MOSFETs · MPN GC11N70T
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| Gate Charge(Qg) | 22nC |
|---|---|
| Drain to Source Voltage | 700V |
| Output Capacitance(Coss) | 37pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 395mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 871pF |
| Vgs | ±30V |
N-Channel 700V 11A 83W Through Hole TO-220