GOFORD · FETs & Power MOSFETs · MPN GC11N65M
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 21nC |
| Output Capacitance(Coss) | 19pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.2pF |
| RDS(on) | 330mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 768pF |
| Vgs | ±30V |
N-Channel 650V 11A 78W Surface Mount TO-263