GOFORD GC11N65D5

GOFORD · FETs & Power MOSFETs · MPN GC11N65D5

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)21nC
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)5.5pF
RDS(on)330mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)901pF
Vgs±30V

Technical details

650V 11A 78W Surface Mount DFN5x6-8L

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