GOFORD · FETs & Power MOSFETs · MPN GC080N65QF
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| Gate Charge(Qg) | 100nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 298W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.8pF |
| RDS(on) | 70mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.9nF |
| Vgs | ±30V |
650V 50A 5V 298W 70mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS