GOFORD GC075N65QF

GOFORD · FETs & Power MOSFETs · MPN GC075N65QF

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Specifications

Output Capacitance(Coss)105pF
Pd - Power Dissipation347W
Configuration-
Drain to Source Voltage650V
Gate Charge(Qg)75nC
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.1V
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.1nF

Technical details

347W 650V 44A 4.1V 65mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS

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