GOFORD · FETs & Power MOSFETs · MPN GC060N65QF
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| Output Capacitance(Coss) | 217pF |
|---|---|
| Pd - Power Dissipation | 388W |
| Configuration | - |
| Drain to Source Voltage | 650V |
| Gate Charge(Qg) | 128nC |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.6V |
| RDS(on) | 45mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.395nF |
388W 650V 50A 4.6V 45mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS