GOFORD · FETs & Power MOSFETs · MPN GC041N65QF
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| Gate Charge(Qg) | 160nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 70A |
| Output Capacitance(Coss) | 157pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 500W |
| RDS(on) | 36mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 0.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.668nF |
| Vgs | ±30V |
650V 70A 500W Through Hole TO-247