GOFORD G9N40F-A

GOFORD · FETs & Power MOSFETs · MPN G9N40F-A

No reviews yet — be the first to review GOFORD G9N40F-A.

Specifications

Drain to Source Voltage400V
Gate Charge(Qg)25nC
Current - Continuous Drain(Id)9A
Output Capacitance(Coss)116pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation134W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)470mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)893pF
Vgs±20V

Technical details

N-Channel 400V 9A 134W Through Hole TO-220F

Related FETs & Power MOSFETs