GOFORD G90P04F

GOFORD · FETs & Power MOSFETs · MPN G90P04F

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Specifications

Gate Charge(Qg)42nC
Drain to Source Voltage40V
Output Capacitance(Coss)676pF
Current - Continuous Drain(Id)68A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)605pF
RDS(on)6mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.371nF
Vgs±20V

Technical details

P-Channel 40V 68A Through Hole TO-220F

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