GOFORD · FETs & Power MOSFETs · MPN G900P15M
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| Output Capacitance(Coss) | 148pF |
|---|---|
| Pd - Power Dissipation | 198W |
| Configuration | - |
| Gate Charge(Qg) | 27nC |
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF |
| RDS(on) | 62mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.056nF |
P-Channel 150V 60A 100W Surface Mount TO-263