GOFORD · FETs & Power MOSFETs · MPN G900P15K
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 27nC |
| Current - Continuous Drain(Id) | 35A |
| Output Capacitance(Coss) | 149pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 198W |
| RDS(on) | 65mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 106pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.918nF |
| Vgs | ±20V |
150V 35A 2.5V 198W 65mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS