GOFORD G900P15D5

GOFORD · FETs & Power MOSFETs · MPN G900P15D5

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Specifications

Output Capacitance(Coss)149pF
Pd - Power Dissipation198W
Configuration-
Gate Charge(Qg)27nC
Drain to Source Voltage150V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)113pF
RDS(on)65mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.05nF

Technical details

P-Channel 150V 60A 100W Surface Mount DFN5x6-8L

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