GOFORD · FETs & Power MOSFETs · MPN G900N10T
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 26nC |
| Current - Continuous Drain(Id) | 22A |
| Output Capacitance(Coss) | 33pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 72mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.17nF |
| Vgs | ±20V |
N-Channel 100V 22A 55W Through Hole TO-220