GOFORD G8N03

GOFORD · FETs & Power MOSFETs · MPN G8N03

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Specifications

Gate Charge(Qg)13nC
Drain to Source Voltage30V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)900pF
Vgs±20V

Technical details

N-Channel 30V 8A 1.6W Surface Mount SOT-23-6L

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