GOFORD G86N06K

GOFORD · FETs & Power MOSFETs · MPN G86N06K

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Specifications

Output Capacitance(Coss)240pF
Pd - Power Dissipation110W
Configuration-
Gate Charge(Qg)61nC
Drain to Source Voltage60V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)6.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.335nF

Technical details

N-Channel 60V 272A 144W Surface Mount TO-252

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