GOFORD G86N03

GOFORD · FETs & Power MOSFETs · MPN G86N03

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Specifications

Gate Charge(Qg)51nC
Drain to Source Voltage30V
Output Capacitance(Coss)460pF
Current - Continuous Drain(Id)86A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.33nF
Vgs±20V

Technical details

30V 86A 83W Surface Mount TO-252

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