GOFORD G830K

GOFORD · FETs & Power MOSFETs · MPN G830K

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Specifications

Gate Charge(Qg)13.4nC
Drain to Source Voltage500V
Output Capacitance(Coss)58.8pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)3.2pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)586pF
Vgs±30V

Technical details

500V 5A 100W Surface Mount TO-252

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