GOFORD G80P03K

GOFORD · FETs & Power MOSFETs · MPN G80P03K

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Specifications

Gate Charge(Qg)30nC
Drain to Source Voltage30V
Output Capacitance(Coss)738pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)686pF
RDS(on)4.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.496nF
Vgs±20V

Technical details

P-Channel 30V 80A 78W Surface Mount TO-252

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