GOFORD · FETs & Power MOSFETs · MPN G80N03T
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| Gate Charge(Qg) | 36nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 335pF |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 53.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 312pF |
| RDS(on) | 3.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.15nF |
| Vgs | ±20V |
N-Channel 30V 53.4W Through Hole TO-220