GOFORD G80N03K

GOFORD · FETs & Power MOSFETs · MPN G80N03K

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Specifications

Gate Charge(Qg)36nC
Drain to Source Voltage30V
Output Capacitance(Coss)342pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation53.4W
Reverse Transfer Capacitance (Crss@Vds)328pF
RDS(on)3.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.673nF
Vgs±20V

Technical details

N-Channel 30V 80A 69W Surface Mount TO-252

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