GOFORD · FETs & Power MOSFETs · MPN G800N06S2
No reviews yet — be the first to review GOFORD G800N06S2.
| Current - Continuous Drain(Id) | 3A |
|---|---|
| Pd - Power Dissipation | 1.7W |
| RDS(on) | 60mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 458pF |
| Gate Charge(Qg) | 6nC |
| Vgs | ±20V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 60V 3A 1.7W Surface Mount SOP-8