GOFORD · FETs & Power MOSFETs · MPN G800N06H
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| Gate Charge(Qg) | 6nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 457pF |
| Vgs | ±20V |
N-Channel 60V 3A 1.2W Surface Mount SOT-223