GOFORD G7P03S

GOFORD · FETs & Power MOSFETs · MPN G7P03S

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)24.5nC
Output Capacitance(Coss)181pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.7W
RDS(on)16mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)158pF
Number1 P-Channel
Input Capacitance(Ciss)1.253nF
Vgs±20V

Technical details

P-Channel 30V 9A 2.7W Surface Mount SOP-8

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