GOFORD G7P03D2

GOFORD · FETs & Power MOSFETs · MPN G7P03D2

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)19nC
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)17mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.9nF
Vgs±20V

Technical details

30V 7A 900mV 1.3W 17mΩ@10V 1 P-Channel P-Channel DFN-6L(2x2) Single FETs, MOSFETs RoHS

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