GOFORD G7N80CF

GOFORD · FETs & Power MOSFETs · MPN G7N80CF

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)49nC
Output Capacitance(Coss)128pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)1.35Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.178nF
Vgs±30V

Technical details

N-Channel 800V 7A 25W Through Hole TO-220F

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