GOFORD G7K2N20LLE

GOFORD · FETs & Power MOSFETs · MPN G7K2N20LLE

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Specifications

Gate Charge(Qg)11nC
Drain to Source Voltage200V
Output Capacitance(Coss)21pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)605mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)531pF
Vgs±20V

Technical details

N-Channel 200V 2A 1.8W Surface Mount SOT-23-6L

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