GOFORD G75P04T

GOFORD · FETs & Power MOSFETs · MPN G75P04T

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Specifications

Gate Charge(Qg)106nC
Drain to Source Voltage40V
Output Capacitance(Coss)761pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)698pF
RDS(on)5.2mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.985nF
Vgs±20V

Technical details

P-Channel 40V 70A 277W Through Hole TO-220

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