GOFORD G75P04S

GOFORD · FETs & Power MOSFETs · MPN G75P04S

No reviews yet — be the first to review GOFORD G75P04S.

Specifications

Gate Charge(Qg)106nC
Drain to Source Voltage40V
Output Capacitance(Coss)732pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation5.7W
Reverse Transfer Capacitance (Crss@Vds)679pF
RDS(on)5.3mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.893nF
Vgs±20V

Technical details

P-Channel 40V 20A 5.7W Surface Mount SOP-8

Related FETs & Power MOSFETs