GOFORD G75P04M

GOFORD · FETs & Power MOSFETs · MPN G75P04M

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Specifications

Output Capacitance(Coss)698pF
Pd - Power Dissipation115W
Configuration-
Gate Charge(Qg)106nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)668pF
RDS(on)5.3mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.516nF

Technical details

P-Channel 40V 320A 306W Surface Mount TO-263

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