GOFORD G75P04F

GOFORD · FETs & Power MOSFETs · MPN G75P04F

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Specifications

Gate Charge(Qg)106nC
Drain to Source Voltage40V
Output Capacitance(Coss)693pF
Current - Continuous Drain(Id)54A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.45V
Pd - Power Dissipation35.7W
Reverse Transfer Capacitance (Crss@Vds)666pF
RDS(on)5.1mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.768nF
Vgs±20V

Technical details

P-Channel 40V 54A 35.7W Through Hole TO-220F

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